Large-signal characterization of unipolar III-V semiconductor diodes at microwave and millimeter-wave frequencies

Large-signal characterizations are performed for n-GaAs and n-InP diodes operating in oscillator circuits at microwave and millimeter-wave frequencies. A CAD approach, consisting of a physical device model and an efficient numerical solution method, is used to analyze several sample diode structures with different material properties and geometries. The large-signal simulation results are reported for X-band and Q-band diodes, and are found to correlate well with results obtained from both laboratory experiment and large-scale ensemble Monte Carlo calculations.<
>