A lateral magnetotransistor structure with a linear response to the magnetic field

An experimental study and analytical model of a novel magnetotransistor are presented. This device displays some very promising features. A linear response to the magnetic field is experimentally demonstrated and very high sensitivities are measured, on the order of 3000%/T. Previous comparable magnetotransistors have reported sensitivities on the order of 150%/T. A theoretical explanation of the very high sensitivity is proposed, involving carrier deflection as the dominant operating principle.<
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