A 0.5- mu m EEPROM cell using poly-Si TFT technology

A 0.5- mu m EEPROM (electrically erasable programmable read only memory) cell using poly-Si thin-film transistor (TFT) technology is reported. 10- mu s programming time and a good endurance over 10/sup 4/ program/erase cycles were obtained. These device characteristics are promising for low-cost and high-density EEPROMs.