Continuous wave visible InGaP/InGaAlP quantum-well surface-emitting laser diodes

Vertical-cavity surface-emitting lasers in the 0.66 mu m visible spectral region were fabricated by metal-organic chemical vapor deposition. The laser structure consists of four In/sub 0.5/Ga/sub 0.5/P (80 AA)/In/sub 0.5/Al/sub 0.5/GaP (60AA) quantum wells as the active medium. The quantum wells are located in the middle of a one lambda -thick cavity spacer, which is sandwiched between two highly reflective staircase-distributed Bragg reflectors. The continuous wave threshold currents, I/sub th/, are 3.9 and 4.6 mA at -75 and -25 degrees C, respectively, for 15 mu m diameter devices. The lasers can also be operated at room temperature, but only in a pulsed mode with an I/sub th/ of 12 mA at 25 degrees C.