An intelligent power IC with double buried-oxide layers formed by SIMOX technology

A device structure for an intelligent power LSI composed of a vertical power MOSFET and a control CMOS LSI on a single chip is discussed. The distinctive feature of the device structure is that double buried-oxide layers formed by SIMOX technology are utilized to electrically protect the CMOS LSI from the high voltage applied to the power MOSFET. An evaluation of the electrical characteristics of an intelligent power IC and its components fabricated on a trial basis for automotive applications verifies the usefulness of the device structure.<
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