Integrated complementary HBT microwave push-pull and Darlington amplifiers with p-n-p active loads

The authors report the microwave results of complementary heterojunction bipolar transistor (HBT) amplifiers that integrate both n-p-n and p-n-p devices on the same chip using selective molecular beam epitaxy (MBE). An HBT wideband amplifier utilizing the Darlington configuration and implementing a p-n-p active load has a gain of 7.5 dB and a bandwidth from DC to 2.5 GHz. A complementary push-pull amplifier has a saturated output power of 7.5 dBm at 2.5 GHz.<
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