Potential and electric field distributions at a high voltage insulator shed

The charge simulation method is applied to a two-dielectric rotationally symmetrical geometry, consisting of a single section from an approximately periodic sequence of sections of a practical post-type insulator. The dependence on the physical dimensions is determined of the potential and the electric field at various locations inside and outside of the solid dielectric and at the interface. The dependence of these quantities on the radius of the curved portions as well as on the relative dielectric permittivity of the insulator material is found in the range 2.1 to 12000 for symmetrical and asymmetrical applied voltages. A study of the errors in the potential and the field components is carried out. The extension of these results to a practical insulator case is discussed and recommendations regarding some aspects of the design are provided.<
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