Gas source molecular beam epitaxial growth and characterization of InP on GaAs

Heteroepitaxial growth of thick (up to 5 mu m) InP on GaAs by gas-source molecular beam epitaxy is investigated using in-situ reflection high-energy electron diffraction and low-temperature photoluminescence experiments. The initial stages of growth are characterized by a Stranski-Krastanov growth mode. Above the critical thickness for dislocation formation, 3-D islands are formed having sloping sides oriented along the