New PL emission lines in ion-implanted ultrapure LEC InP

Mg/sup +/ ions were implanted into undoped liquid encapsulation Czochralski (LEC) InP having different residual net electron concentrations. Photoluminescence (PL) measurements at 2 K for ultrapure InP presented two new emissions slightly below bound exciton emissions. A sharp emission, 'g', is formed in lightly doped InP and is ascribed to a new energy state of isolated-acceptor. A broad emission, (g-g), was observed in moderately doped InP and is attributed to acceptor-acceptor pairs. These emissions were suggested to be common occurrences in acceptor-doped III-V semiconductors and were confirmed to be easily annihilated by small amounts of donor impurities.<
>