Development of 3-inch diameter InP single crystals with low dislocation density using VCZ technique

Low-dislocation-density InP single crystals of 3-in diameter have been successfully developed by the VCZ (vapor pressure controlled Czochralski) growth technique. The dopants used were Fe, Zn, and S. In the case of Fe-doped 3-in diameter InP crystal, the EPD (etch pit density) across the ingot was in the range of 3.5-7*10/sup 3/ cm/sup -2/, one order of magnitude less than that of conventional liquid encapsulation Czochralski (LEC) crystals. In the case of Zn-doped crystal, the low EPD area (EPD<500 cm/sup -2/) of 3-in-diameter wafer with carrier concentration of 4.7*10/sup 18/ cm/sup -3/ was 34 cm/sup 2/, about two times larger than that of a wafer grown by the conventional LEC method. A S-doped InP crystal grown with a carrier concentration of approximately 3*10/sup 18/ cm/sup -3/ had a low EPD area of 21.5 cm/sup 2/, nearly two times larger than that of conventional crystals with carrier concentration of approximately 4*10/sup 18/ cm/sup -3/.<
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