Growth of indium phosphide by solid source molecular beam epitaxy

For the InP solid source molecular beam epitaxy it is shown that P/sub 4/ tetramers are at least 20 times less effective at incorporating into the InP lattice than P/sub 2/ dimers. The P/sub 2/ incorporation rate remains approximately constant for fixed incident flux in the normal temperature regime for growth between approximately=480-520 degrees C, but the morphology of the