Hybrid OMVPE/VME for long-life lasers on Si

The authors employ a hybrid organometallic vapor phase epitaxy/vapor mixing epitaxy (OMVPE/VME) method and a layer structure for improving crystalline quality to obtain high-quality InGaAs/InGaAsP multiple quantum well (MQW) layers on Si. The laser active layers on Si have an excellent optical property comparable to the active layers on InP despite a high dislocation density of 10/sup 7/ cm/sup -2/. This results from the regularity of dislocation distribution that forms in InP growth by VME. The MQW laser emits at a 1.54- mu m wavelength and exhibited no degradation after over 6000 h of room-temperature CW operation. The results obtained demonstrate the high quality of the new MQW laser structure on Si and suggest the potential for optoelectronic integrated circuits using InP-based optical devices and Si-LSIs.<
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