In-situ X-ray monitoring in MOVPE and feedback growth of strained InGaAs

The authors have demonstrated in-situ X-ray monitoring in MOVPE (metal-organic vapor phase epitaxy). The in-situ X-ray monitoring was achieved even under the growth conditions at high temperature. The temperature dependence of lattice mismatch could be evaluated with sufficient accuracy and high resolution. In-situ X-ray monitoring was applied to the feedback growth of a strained InGaAs layer. The precise control of lattice mismatch of the InGaAs layer was achieved by the feedback growth.<
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