Measurement of interface states distribution at the gates of InP FETs

An improved frequency dispersive transconductance technique has been developed to measure the density and frequency distribution of interface states at the gates and source-drain access regions of MESFETs. The technique has been developed to be applicable to both MESFETs and MISFETs. The application of this technique to study the state of interface of enhanced barrier height gate n-channel InP MESFETs and plasma enhanced chemical vapor deposition (PECVD) SiO/sub 2/ insulated gate MISFETs is reported.<
>