1 GHz CCD transient detector

A charge coupled-device (CCD) capable of acquiring 2 K samples of analog information at a 1-GHz rate, the fastest CCD on silicon, is reported. The prototype fast-in/slow-out (FISO) CCD is configured as single-input, single-output device. Subsequent to the front-end 1-GHz input sampler a novel three-stage charge-domain demultiplexer is implemented which distributes the samples from one input to 8 parallel CCDs of 256 stages each. The outputs from the 8 channels are then brought to a single output amplifier through a serial-output register designed for a read-out rate of 1-10 MHz. The complete CCD system has a dynamic range of >45 dB and can handle a maximum of 40-45 K electrons with a transfer loss of less than 4*10/sup -5/.<>