X-band low phase distortion MMIC power limiter

Describes the design and performance of an 8-GHz MMIC (monolithic microwave integrated circuit) MESFET (metal-semiconductor FET) power limiter. This limiter incorporates a special gate biasing scheme and makes use of appropriate load conditions which reduce the unexpected phase variations experienced by the signal through the device. Measured performances (phase variations less than 8 over a 22-dB input power range) are found to be in agreement with the theoretical ones obtained from large signal simulations.<
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