CBE grown 1.5 mu m GaInAsP-InP surface emitting lasers

GaInAsP-InP surface-emitting (SE) lasers have been fabricated using chemical beam epitaxy (CBE) and their lasing characteristics investigated. A threshold current of 2.6 mA was obtained under 77 K CW operation for a device with an improved GaInAsP contact layer having 0.1- mu m thickness and relatively low hole concentration (1x10/sup 19/ cm/sup -3/) to reduce the optical loss. A hybrid mirror consisting of a semiconductor distributed Bragg reflector (DBR) and Si-SiO/sub 2/ multilayers is introduced. Threshold current as low as 1.7 mA was obtained at 77 K CW operation, the lowest values at 77 K for long-wavelength SE lasers ever reported. Near-room-temperature pulsed operation was also obtained for both structures.<
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