Reduction of linewidth enhancement factor in InGaAsP-InP modulation-doped strained multiple-quantum-well lasers

The linewidth enhancement factor alpha in InGaAsP-InP modulation-doped strained multiple-quantum-well (MQW) lasers has been evaluated theoretically and experimentally. A reduction of the alpha -parameter due to modulation doping is demonstrated. A small alpha -parameter of less than 1 is obtained not at wavelength for the gain peak but within certain range of wavelength where the gain is positive. The smaller alpha -parameter in modulation-doped strained MQW lasers should result in performance improvements that are advantageous for optical communication system applications.<
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