Suppression of Auger recombination effects in compressively strained quantum-well lasers

Based on detailed valence band structure, a Monte Carlo analysis of the Auger recombination effects in compressively strained quantum-well diode lasers has been carried out. The recombination current is found to increase with carrier density, but at a rate far less rapidly than the conventional n/sup 3/-rule has suggested. At moderate carrier densities, the recombination current is also found to decrease exponentially with increasing strain.<
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