1.3 mu m InAs/sub y/P/sub 1/-/sub /y-InP strained-layer quantum-well laser diodes grown by metalorganic chemical vapor deposition

The authors have fabricated 1.3- mu m InAsP-InP separate-confinement-heterostructure (SCH) strained-layer double-quantum-well (SL-DQW) laser diodes (LDs) by metalorganic chemical vapor deposition (MOCVD). A low threshold current density of 410 A/cm/sup 2/ was obtained. The CW threshold current was as low as 1.8 mA at 20 degrees C, and maximum CW operating temperature of 120 degrees C was obtained. These characteristics are almost the same as those of well-designed GaInAsP-InP SL-QW LDs. Further improvement of the characteristics of InAsP-InP LDs is expected by optimizing the device structure.<
>