A 6 ns 1 Mb CMOS SRAM with high-performance sense amplifier

A 1-Mb (256 K*4) SRAM with an access time of 6 ns using a 0.5- mu m CMOS technology is described. Fast access and low power dissipation are achieved by using a new nMOS source-controlled latched sense amplifier and a data output pre-reset circuit that reduces the output transition time.<
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