Power diode HYBRID model with forward and reverse recovery for use in circuit simulators

A method called the HYBRID method, which solves the differential equations describing the semiconductor partly analytically and partly numerically, is presented. The advantages of this model compared with other ones are: continuous description of the switching process; simple simulator equations (no convergence problems); accurate solution of the ambipolar diffusion equation; and adaptability of the method to other devices. Important effects such as conductivity modulation and field dependence of charge carrier velocity are considered as well as the effect of mobile charge carriers in the space charge region. The model is programmed in FORTRAN 77 and implemented in the SABER circuit simulator, and has been verified for different ranges of operation.<
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