1.7-ps, microwave, integrated-circuit-compatible InAs/AlSb resonant tunneling diodes

Microwave integrated-circuit-compatible InAs/AlSb resonant tunneling diodes (RTDs) have been fabricated. The resulting devices have peak current densities of 3.3*10/sup 5/ A/cm/sup 2/ with peak-to-valley ratios of 3.3. Switching transition times of 1.7 ps are measured using electrooptic sampling techniques.<
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