Simulation of sub-0.1- mu m MOSFETs with completely suppressed short-channel effect

MOSFETs in the sub-0.1- mu m regime were investigated using a nonplanar device simulator CADDETH-NP. It was found that even in this regime, the short-channel effect can be suppressed in grooved gate MOSFETs because of the concave corner of the gate insulator. MOSFETs with a gate length of 0.05 mu m or less with no threshold voltage lowering can be made by optimizing the concave corner radius, junction depths, and channel doping.<
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