High-performance submicrometer undergated thin-film transistors without high-temperature rapid thermal annealing or plasma hydrogenation

High-performance submicrometer undergated thin-film transistors (TFTs) are fabricated without using high-temperature rapid thermal annealing or plasma hydrogenation. These processes are used in the state-of-the-art devices, but avoided in current manufacturing. For a 0.35- mu m*0.35- mu m device and a 0.7- mu m*0.5- mu m device, I/sub ON/ of 3 and 1.2 mu A are obtained with ON/OFF current ratios of 4*10/sup 5/ and 1.2*10/sup 8/, respectively, very close to that of state-of-the-art devices. A new lightly-doped-drain (LDD) structure is employed to improve I/sub ON/ reproducibility, which is difficult to achieve for deep-submicrometer devices with the conventional lightly-doped-offset (LDO) structure.<
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