Process and device characterization for a 30-GHz f/sub T/ submicrometer double poly-Si bipolar technology using BF/sub 2/-implanted base with rapid thermal process

Process and device parameters are characterized in detail for a 30-GHz f/sub T/ submicrometer double poly-Si bipolar technology using a BF/sub 2/-implanted base with a rapid thermal annealing (RTA) process. Temperature ramping during the emitter poly-Si film deposition process minimizes interfacial oxide film growth. An emitter RTA process at 1050 degrees C for 30 s is required to achieve an acceptable emitter-base junction leakage current with an emitter resistance of 6.7*10/sup -7/ Omega -cm/sup 2/, while achieving an emitter junction depth of 50 nm with a base width of 82 nm. The primary transistor parameters and the tradeoffs between cutoff frequency and collector-to-emitter breakdown voltage are characterized as functions of base implant dose, pedestal collector implant dose, link-base implant dose, and epitaxial-layer thickness. Transistor geometry dependences of device characteristics are also studied. Based on the characterization results for poly-Si resistors, boron-doped p-type poly-Si resistors show significantly better performance in temperature coefficient and linearity than arsenic-doped n-type poly-Si resistors.<
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