Delay time in GaAs high-power high-speed photoconductive switching devices

The delay time between the beginning of optical illumination and the onset of switching in the transient response of semi-insulating GaAs high-power high-speed photoconductive switching devices is discussed. The field- and laser-energy-dependent optical absorption coefficient is used to explain the experimentally observed open-state-field, and laser-energy-dependent delay time. Calculations are shown to agree with the experimental results.<
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