Two-dimensional electron gas (2-DEG) interaction in a double-heterostructure selectively contacted field-effect transistor

Experimental results concerning the interaction between two two-dimensional electron gases (2-DEGs) in a single-quantum-well AlGaAs/GaAs/AlGaAs heterostructure field-effect transistor are presented. The results of magneto-transconductance measurements clearly delineate the behavior of low-field carrier mobilities in the two 2-DEG systems. The drain current/voltage characteristics clearly demonstrate that at 300 K the two 2-DEG systems interact, and at 77 K there is negligible interaction between the two 2-DEG systems under low-field conditions of operation.<
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