X-band power AlGaAsInGaAs P-n-p HBTs

AlGaAs/InGaAs P-n-p heterojunction bipolar transistors (HBTs) were fabricated using carbon-doped material grown by nonarsine metal-organic vapor-phase epitaxy (MOVPE). F/sub max/ of 39 GHz and f/sub t/ of 18 GHz were obtained. Operated in common-base mode, a P-n-p HBT achieved 0.5-W output power with 8-dB gain at 10 GHz; saturated output power was 0.69 W. Results are presented for devices with emitter lengths from 120 to 600 mu m.<
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