Electron quasi-Fermi level-Fermi level splitting at the base-emitter junction of AlGaAs/GaAs HBT's

The amount of electron quasi-Fermi level splitting in the emitter-base junction of AlGaAs/GaAs single- and double-heterojunction bipolar transistors is computed. The degree of splitting is found to be generally small, and less pronounced in double-heterojunction devices. However, it is argued that the effect of the splitting on the current gain may be significant.<
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