Characterization of surface mobility in MOS structures containing interfacial cesium ions

The degradation of inversion-layer electron and hole mobility in silicon MOS devices by interface charge at 295 and 77 K is discussed. The charge was controllably introduced using cesium implanted into the gate oxide and subsequently diffused to the oxide-substrate interface. The charged-impurity-scattering component of the mobility has been extracted and characterized as a function of inversion charge density and cesium dose.<
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