Organic-on-inorganic semiconductor photodetector

High-efficiency high-bandwidth organic-on-inorganic (OI) semiconductor heterojunction photodetectors are discussed. The devices consist of a thin layer of the organic semiconductor perylenetetracarboxylic dianhydride (PTCDA) in contact with an inorganic semiconductor (Si) substrate. Indium tin oxide (ITO) is used as a transparent ohmic contact to the organic film. The external quantum efficiency of the detector was 85%, giving an internal quantum efficiency approaching 100%. The response time to fast optical pulses was 5 ns. Response times of OI detectors can be further reduced to about 100 ps by optimization of device parameters.<
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