Modeling of an inversion base bipolar transistor

Several two-dimensional numerical simulations performed to study the operational characteristics of a GaAs inversion base bipolar transistor (IBT) are discussed. The simulations show that at low base voltages the IBT operates like a junction field-effect transistor, which is characterized by a large depletion region near the base contact. At high base bias levels, there is a significant amount of hole injection into the active channel region, and the device begins to operate in the bipolar mode. The highest computed f/sub T/ is 21 GHz at a collector current density of 1.3*10/sup 4/ A/cm/sup 2/.<
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