Electronic component preview of low dose rate behavior (HCMOS devices)

An effort was made to evaluate Texas Instruments HCMOS devices under total dose irradiation, for space applications. The parameter degradations for a dose rate of 8 krad/h are presented. The postirradiation effects at 293 K were recorded for all devices for about one year. Postirradiation effects (PIEs) were observed, and their kinetics are described. Dose rate effects are presented in a discussion of total dose simulation procedures. Thermal annealing was performed with a method similar to the thermally stimulated current method.<
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