Charge-extraction technique for studying the surface states in MOS devices

A method called the charge-extraction technique is proposed for studying the surface states in MOS devices. This new technique utilizes the substrate current arising from the non-steady-state emission of carries from the surface states instead of that arising from their steady-state recombination, as utilized in the charge-pumping method. This is achieved by confining the amplitude of the gate-voltage signal to such a magnitude that the surface region of the device does not cross the depletion limits. A new theoretical model is developed for the present case which predicts the occurrence of a maximum value of the substrate current at a certain optimum frequency of the applied gate-voltage signal. Experimental measurements have been found quite in conformity with the theoretical model. It is found that the maximum substrate current and the corresponding optimum frequency, obtained in this way, can serve as more handy and precise parameters for the determination of the surface states.<
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