A novel model of the gate current in heterojunction FETs

The authors present a model of the gate current in heterojunction FETs that takes into account two-dimensional electron gas effects at the heterojunction interface. The gate current results from tunnel and thermionic contributions. This model takes into account a number of technological parameters such as heterojunction barrier height, threshold voltage, gate length, and temperature. It has been tested against experimental measurements of gate current in AlGaAs/GaAs MISFETs at various temperatures. The agreement has been found quite satisfactory in a large range of temperatures.<
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