Process HE: a highly advanced trench isolated bipolar technology for analogue and digital applications

He is a novel bipolar process which incorporates polysilicon base/emitter contacts, trench isolation, and an advanced base/emitter structure. The initial version of the process has a 14-GHz f/sub T/ and will shortly enter into full production. The final version of the process has a 22-GHz f/sub T/ and has recently finished its development phase. A description is given of three aspects of HE. The first is the fabrication sequence for which a novel base-emitter sidewall spacer technique is outlined. The second is the performance of HE transistors themselves. Finally, three representative integrated circuits are described.<
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