Reliability testing by precise electrical measurement

Tests have been devised which provide indication of incipient failure of CMOS devices. The experimental methodology to confirm the value of the tests depends on the acceptance of the Arrenhius relationships as it was investigated using accelerated life test techniques. Tests have included leakage current, transient current, electrical noise, upper cutoff frequency and delay times. The devices under tests have been stressed to accelerate aging and the results of the diagnostic electrical measurements correlated with subsequent failure. Consideration has been given to the implementation of the reliability tests in conjunction with the normal functional testing.<
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