Formation of source and drain regions for a-Si:H thin-film transistors by low-energy ion doping technique

A low-energy ion doping technique has been applied to form source and drain regions of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) with an inverted staggered electrode structure. Phosphine gas diluted in hydrogen was discharged by RF power and magnetic field. Both phosphorus and hydrogen ions were accelerated to an energy of 5.5 keV and implanted into heated samples. The ON-OFF current ratio and the field-effect mobility of the fabricated TFTs were 10/sup 6/ and 0.12 cm/sup 2//V-s, respectively.<
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