A 35-GHz 20- mu m/sup 2/ self-aligned PNP technology for ultra-high-speed high-density complementary bipolar ULSIs

An ultra-high-speed high-density self-aligned pump technology for complementary bipolar ULSIs which is fully compatible with the npn process is discussed. A low sheet-resistance p/sup +/ buried layer and an extrinsic n/sup +/ polysilicon layer with U-grooved isolation enable the transistor size to be scaled down to about 20 mu m/sup 2/. A shallow emitter junction depth of 45 nm and narrow base width of 30 nm improve maximum cutoff frequency to 35 GHz. The power dissipation of a pnp pull-down complementary emitter-follower ECL circuit for the loaded case is calculated to be reduced to 1/5 compared with the conventional ECL circuit.<
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