An investigation into the factors affecting the sol-gel processing of PZT thin layers

A method for depositing ferroelectric thin layers of PZT 53/47 and 45/55 on platinized silicon is described. Results of preliminary investigations into the nature of the precursors are presented and the effects on the reproducibility of solutions in processing are discussed. Comparisons of the microstructures of thin layers prepared from the two compositions are given and differences in polarization reversal hysteresis measurements are discussed in relation to them.<
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