Properties of sol gel processed PLZT (2/54/46) films on indium tin oxide

Lanthanum doped lead zirconate titanate (PLZT) films have been deposited by a sol gel technique on indium tin oxide (ITO) coated glass substrates. Evolution of the crystallographic structure, dielectric behavior, and ferroelectric properties has been studied as a function of film thickness (0.3 to 0.8 mu m), annealed over a range of temperatures (500 to 650 degrees C). Results have indicated the existence of a nonferroelectric layer in the PLZT-ITO interface.<
>