PZT thin films for GaAs ferroelectric RAM applications

Lead zirconate titanate (PZT) ferroelectric thin films prepared by the sol-gel technique have been successfully developed. The film preparation is described, and the experimental results on the characterization of the structural, dielectric, ferroelectric, switching endurance, and memory retention properties of the films are given. The preliminary results on the processing and integration of PZT capacitors and GaAs junction field-effect transistors for memory cells are presented.<
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