On the measurement of surface state density and diffusion component from bulk in MOS capacitors with long relaxation time

The fast method used for the measurement of the generation lifetime by W.W. Keller (ibid. vol.ED-34, p.1141-6, May 1987) is examined by a simulation program. The lack of correlation between the surface generation velocity and the surface state density is observed and discussed. In the analysis, in addition to the surface-state generation and space-charge-region generation considered by Keller, bulk generation is considered.<
>