High-frequency FET noise performance: a new approach

A formulation is proposed for calculating the FET noise performance in the high-frequency range (EHF). In the first step, the concept of a local small-signal equivalent circuit is introduced, and a novel method for calculating the FET admittance parameters is proposed. In the second step, a novel formulation of the impedance field is given. It is shown that this approach reflects better the frequency evolution of the noise source values and consequently gives a better noise figure.<
>