Modeling of high-energy electrons in MOS devices at the microscopic level

The optimization of a transport model for simulation of electron transport in metal-oxide-silicon (MOS) structures at the microscopic level has been performed. Quantitative agreement between simulations and experiments is obtained even when dealing with problems involving very high energy electrons. The model parameters have been accurately determined by comparison with data including the drift velocity in bulk silicon, the electron velocity, and impact ionization rates in the n-MOS inversion layer, and the probability of electron injection from silicon into silicon dioxide.<
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