Field-extended field-effect transistors in 0.25-eV bandgap HgCdTe

A novel FET structure for use with 0.25-eV bandgap HgCdTe is described. The device, known as the field-extended field-effect transistor (FEFET), incorporates additional electrodes to control the surface electric field at the perimeter of the metallurgical diodes comprising the source and the drain of the transistor. Surrounding the metallurgical diodes with field-induced inversion regions improves the FEFET avalanche breakdown and subthreshold leakage characteristics as compared to standard MISFETs fabricated in HgCdTe. The FEFET is particularly attractive for switching applications or other uses requiring a high drain-to-source bias and a gate bias near the threshold potential.<
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