Dependence of hot-carrier immunity on channel length and channel width in MOSFETs with N/sub 2/O-grown gate oxides

The authors report on the channel length (0.5-5 mu m) and width (0.6-10 mu m) dependence of hot-carrier immunity in n-MOSFETs with N/sub 2/O-grown gate oxides ( approximately 85 AA). While channel hot-carrier-induced degradation has a strong dependence on channel geometry in control devices, the degradation and its channel geometric dependences are greatly suppressed in devices with N/sub 2/O-gate oxides. Under Fowler-Nordheim injection stress, the control device shows an enhanced degradation with decreasing channel length and increasing channel width, whereas N/sub 2/O device exhibits a less dependence on channel geometry.<
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