Electrical properties of MOSFET's with N/sub 2/O-nitrided LPCVD SiO/sub 2/ gate dielectrics

Electrical properties of MOSFETs with gate dielectrics of low-pressure chemical-vapor-deposited (LPCVD) SiO/sub 2/ nitrided in N/sub 2/O ambient are compared to those with control thermal gate oxide. N/sub 2/O nitridation of CVD oxide, combines the advantages of interfacial oxynitride growth and the defectless nature of CVD oxide. As a result, devices with N/sub 2/O-nitrided CVD oxide show considerably enhanced performance (higher effective electron mobility), improved reliability (reduced charge trapping, interface state generation, and transconductance degradation), and better time-dependent dielectric breakdown (TDDB) properties (t/sub BD/) compared to devices with control thermal oxide.<
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