High-performance metal/silicide antifuse (for CMOS technology)

A low-programmed-resistance low-thermal-budget, high-performance metal/silicide antifuse is reported. The programmed ON-State resistance of the metal/silicide antifuse is around 60 Omega , which is a factor of 10 less than that of Si-based antifuses (poly/n/sup +/ and poly/poly). Metal/silicide antifuses also eliminate the nonlinear ON-state resistance seen in Si-based antifuses. Programming of the antifuse can be done in 2 ms at 14 V, which is comparable to Si-based antifuses. Both ON- and OFF-state reliability of the metal/silicide antifuse are shown to be satisfactory.<
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